Title :
Comparison of pMOSFET total dose response for Co-60 gammas and high-energy protons
Author :
Pease, Ronald L. ; Simons, Mayrant ; Marshall, Paul
Author_Institution :
RLP Res. Inc., Albuquerque, NM, USA
fDate :
6/1/2001 12:00:00 AM
Abstract :
The ionizing radiation response of pMOSFETs used as dosimeters (RADFETs) is compared for Co-60 gammas and high-energy protons. For comparable Co-60 and proton doses, RADFET response for high-energy protons (60-200 MeV) was found to be only 65-85% of their Co-60 response. This difference is not fully understood but is shown to be partially a result of increased columnar recombination in SiO2 for high-energy proton irradiation
Keywords :
dosimeters; gamma-ray detection; power MOSFET; proton detection; 60 to 200 MeV; 60Co gamma rays; RADFETs; SiO2; columnar recombination; dosimeters; high-energy proton irradiation; high-energy protons; ionizing radiation response; pMOSFET total dose response; Degradation; Dielectrics; Ionizing radiation; Laboratories; Linear circuits; MOSFET circuits; Microelectronics; Protons; Radiation effects; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
