Title :
MOS transistor model and fast timing simulator
Author :
Hua-Zhong Yang ; Cai, Xia ; Jia, Yao-Wei
Author_Institution :
Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
fDate :
4/1/1999 12:00:00 AM
Abstract :
A new table-based region-wise-linear MOS transistor model and analytical solution of generic sub-circuit primitive is presented. The MOS model includes the body effect and this subcircuit primitive can also handle floating capacitors. Compared with HSPICE the results of the system are very accurate with an error of <3%, and there is a speedup of 1-2 orders of magnitude
Keywords :
MOSFET; circuit simulation; semiconductor device models; timing; MOS transistor model; body effect; fast timing simulator; floating capacitors; region-wise-linear MOSFET model; subcircuit primitive; table-based MOSFET model;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990403
