• DocumentCode
    1518796
  • Title

    MOS transistor model and fast timing simulator

  • Author

    Hua-Zhong Yang ; Cai, Xia ; Jia, Yao-Wei

  • Author_Institution
    Dept. of Electron. Eng., Tsinghua Univ., Beijing, China
  • Volume
    35
  • Issue
    7
  • fYear
    1999
  • fDate
    4/1/1999 12:00:00 AM
  • Firstpage
    561
  • Lastpage
    563
  • Abstract
    A new table-based region-wise-linear MOS transistor model and analytical solution of generic sub-circuit primitive is presented. The MOS model includes the body effect and this subcircuit primitive can also handle floating capacitors. Compared with HSPICE the results of the system are very accurate with an error of <3%, and there is a speedup of 1-2 orders of magnitude
  • Keywords
    MOSFET; circuit simulation; semiconductor device models; timing; MOS transistor model; body effect; fast timing simulator; floating capacitors; region-wise-linear MOSFET model; subcircuit primitive; table-based MOSFET model;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990403
  • Filename
    769483
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1518796