Title :
5.65 GHz High-Efficiency GaN HEMT Power Amplifier With Harmonics Treatment up to Fourth Order
Author :
Kamiyama, Masahiro ; Ishikawa, Ryo ; Honjo, Kazuhiko
Author_Institution :
Dept. of Commun. Eng. & Inf., Univ. of Electro-Commun., Chofu, Japan
fDate :
6/1/2012 12:00:00 AM
Abstract :
A high-efficiency GaN HEMT power amplifier with harmonics treatment up to the fourth order has been developed at the 5.8 GHz band. The harmonics treatment was applied by considering the influence of feedback and shunt capacitance in the GaN HEMT, to reduce the average power consumption in a GaN HEMT including parasitic elements. The fabricated GaN HEMT amplifier delivered a maximum power-added efficiency of 79% and a maximum drain efficiency of 90% at 5.65 GHz, and the saturated output power was 33.3 dBm. This value represents state-of-the-art C-band performance efficiency.
Keywords :
III-V semiconductors; gallium compounds; microwave power amplifiers; power HEMT; wide band gap semiconductors; C-band performance efficiency; GaN; frequency 5.65 GHz; frequency 5.8 GHz; high-efficiency HEMT power amplifier; power consumption; Gallium nitride; HEMTs; Harmonic analysis; Power demand; Power system harmonics; Wireless communication; GaN HEMT; harmonics treatment; high-efficiency; power amplifier (PA);
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2012.2197385
