Title :
Vertical Silicon p-n-p-n Tunnel nMOSFET With MBE-Grown Tunneling Junction
Author :
Tura, Ahmet ; Zhang, Zhenning ; Liu, Peichi ; Xie, Ya-Hong ; Woo, Jason C S
Author_Institution :
Intel Corp., Hillsboro, OR, USA
fDate :
7/1/2011 12:00:00 AM
Abstract :
Tunnel field-effect transistors (TFETs) can potentially achieve sub-60-mV/dec SS, but their performance strongly depends on the dopant profile at the tunneling junction. In this paper, very sharp (~.2 nm/dec) optimized tunneling-junction dopant profile for the silicon p-n-p-n TFET is demonstrated by molecular beam epitaxial growth. Devices are fabricated with a low-thermal-budget ( <; 620°C) vertical process flow to preserve the as-grown channel profile. Compared with a p-i-n TFET, the p-n-p-n TFET has 30% lower subthreshold swing, ION three times higher, and 50% reduced tunneling voltage drop.
Keywords :
MOSFET; electric potential; elemental semiconductors; molecular beam epitaxial growth; p-n junctions; silicon; tunnelling; MBE-grown tunneling junction; Si; dopant profile; low-thermal-budget vertical process flow; metal-oxide-semiconductor field-effect transistor; molecular beam epitaxial growth; p-i-n TFET; subthreshold swing; tunneling voltage drop; vertical silicon p-n-p-n tunnel nMOSFET; Doping; FETs; Junctions; Logic gates; PIN photodiodes; Silicon; Tunneling; p-i-n tunnel field-effect transistor (TFET); p-n-p-n tunnel field-effect transistor (TFET);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2148118