Title :
Sb-HEMT: Toward 100-mV Cryogenic Electronics
Author :
Noudéviwa, Albert ; Roelens, Yannick ; Danneville, François ; Olivier, Aurélien ; Wichmann, Nicolas ; Waldhoff, Nicolas ; Lepilliet, Sylvie ; Dambrine, Gilles ; Desplanque, Ludovic ; Wallart, Xavier ; Moschetti, Giuseppe ; Grahn, Jan ; Bollaert, Sylvain
Author_Institution :
Inst. of Electron., Microelectron., & Nanotechnol., Univ. Lille I, Villeneuve d´´Ascq, France
Abstract :
In this paper, we present a first full set of characteristics (dc, fT, fmax, and noise) of InAs/AlSb high-electron mobility transistors (HEMTs) operating under cryogenic temperature and low-power conditions. Those results are systematically compared and deeply analyzed at room temperature and 77 K. The characteristics improvement achieved at 77 K open up the possibility to develop ultralow-power cryogenic electronics (low-noise amplifier), featuring excellent high-frequency/noise performances below 100-mV dc biasing.
Keywords :
III-V semiconductors; aluminium compounds; cryogenic electronics; high electron mobility transistors; indium compounds; low-power electronics; HEMT; InAs-AlSb; cryogenic temperature; high-electron mobility transistors; temperature 293 K to 298 K; temperature 77 K; ultralo-power cryogenic electronics; voltage 100 mV; Cryogenic electronics; HEMTs; Impact ionization; Low-noise amplifiers; MODFETs; Noise measurement; Radio frequency; Semiconductor device noise; Switches; Temperature; Antimonide-based compound semiconductor; III-V semiconductors; InAs/AlSb; cryogenic electronics; high-electron mobility transistors (HEMTs); impact ionization; low-power electronics;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2010.2050109
