DocumentCode
1518961
Title
Exploiting electro-thermal resonance in high voltage power bipolar devices
Author
D´Amore, D. ; Maffezzoni, P.
Author_Institution
Dipt. di Elettronica, Politecnico di Milano, Italy
Volume
35
Issue
7
fYear
1999
fDate
4/1/1999 12:00:00 AM
Firstpage
600
Lastpage
602
Abstract
It is theoretically and experimentally proven that the fast heating mechanism that takes place in high voltage power bipolar transistors can be coupled with the electrical dynamics to obtain stable electro-thermal oscillations. Finding such a resonance condition allows the experimental extraction of fast thermal transient parameter values
Keywords
equivalent circuits; oscillations; power bipolar transistors; resonance; semiconductor device models; thermal analysis; thermal resistance; HV power bipolar devices; electrical dynamics; electro-thermal resonance; fast heating mechanism; fast thermal transient parameter values; high voltage bipolar transistors; resonance condition; stable electro-thermal oscillations;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19990372
Filename
769509
Link To Document