Title :
Exploiting electro-thermal resonance in high voltage power bipolar devices
Author :
D´Amore, D. ; Maffezzoni, P.
Author_Institution :
Dipt. di Elettronica, Politecnico di Milano, Italy
fDate :
4/1/1999 12:00:00 AM
Abstract :
It is theoretically and experimentally proven that the fast heating mechanism that takes place in high voltage power bipolar transistors can be coupled with the electrical dynamics to obtain stable electro-thermal oscillations. Finding such a resonance condition allows the experimental extraction of fast thermal transient parameter values
Keywords :
equivalent circuits; oscillations; power bipolar transistors; resonance; semiconductor device models; thermal analysis; thermal resistance; HV power bipolar devices; electrical dynamics; electro-thermal resonance; fast heating mechanism; fast thermal transient parameter values; high voltage bipolar transistors; resonance condition; stable electro-thermal oscillations;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990372
