Title :
Transferred-substrate HBTs with 254 GHz fτ
Author :
Mensa, D. ; Lee, Q. ; Guthrie, J. ; Jaganathan, S. ; Rodwell, M.J.W.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
4/1/1999 12:00:00 AM
Abstract :
The authors report the simultaneous achievement of record current gain cutoff frequency fτ and high power gain cutoff frequency fmax in a transferred-substrate HBT. The device parasitics are examined, and inferences made about the relative value of various approaches toward further improvements in fτ and fmax. Transferred-substrate HBTs with record fτ of 254 GHz are reported
Keywords :
equivalent circuits; heterojunction bipolar transistors; millimetre wave bipolar transistors; semiconductor device models; 254 GHz; EHF; current gain cutoff frequency; device parasitics; power gain cutoff frequency; transferred-substrate HBT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990398
