Title :
InP HEMTs with 39% PAE and 162-mW output power at V-band
Author :
Grundbacher, R. ; Nishimoto, M. ; Chin, T.P. ; Chen, Y.C. ; Lai, R. ; Yamauchi, D. ; Schreyer, G. ; Block, T. ; Medvedev, V. ; Streit, D.
Author_Institution :
Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA
fDate :
6/1/1999 12:00:00 AM
Abstract :
We report state-of-the-art V-band power performance of 0.15-μm gate length InGaAs-InAlAs-InP HEMTs. The 500-μm periphery InP HEMTs were measured in fixture at 60 GHz and demonstrated an output power of 162 mW (22.1 dBm) with 39% power-added efficiency (PAE) and 6.1-dB power gain at an input power of 16 dBm. These results represent the best combination of power and PAE reported to date at this frequency for any solid state device.
Keywords :
III-V semiconductors; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; 0.15 micron; 162 mW; 39 percent; 6.1 dB; 60 GHz; EHF; InGaAs-InAlAs-InP; InP HEMTs; MM-wave device; V-band power performance; power gain; power-added efficiency; Electrons; Gallium arsenide; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Military satellites; Phased arrays; Power generation; Tuning;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
