DocumentCode
1519160
Title
Crystalline quality of the trigonal piezoelectric materials and effects of the extended defects
Author
Capelle, Bernard ; Detaint, Jacques ; Epelboin, Yves
Author_Institution
Inst. de Miner. et de Phys. des Milieux Condenses (IMPMC), Univ. Pierre et Marie Curie-Paris VI, Paris, France
Volume
59
Issue
5
fYear
2012
fDate
5/1/2012 12:00:00 AM
Firstpage
1013
Lastpage
1022
Abstract
Many frequently used or promising piezoelectric materials belong to crystal classes 32 or 3m. Among them are α quartz and its crystallographic analogs (AlPO4, GaPO4, α-GeO2, etc.), the numerous materials of the langasite (La3Ga5SiO14) family and also lithium tantalate (LiTaO3) and lithium niobate (LiNbO3). In this paper we study the present state of the art for these materials, indicate their principal point and extended defects, and present methods to reduce the dislocation density. Large concentrations of intrinsic point defects often exist in crystal grown at very high temperatures. The point defects (intrinsic or related to impurities) modify the constants and can increase the acoustic losses. This is the case for the alkali ions and the OH that induce severe losses in different temperature intervals. The extended defects also affect the performances of the piezoelectric devices. Some, such as twins, ferroelectric domains, or large solid or liquid inclusions, have very detrimental effects. Dislocations, growth bands, and planar defects are more difficult to avoid and affect the devices in a more subtle manner. In quartz and its analogs, dislocations seem to increase the nonlinear elastic effects and have a collective effect on the vibration modes, particularly in energy trapping resonators. Growth bands and stacking faults also produce similar effects.
Keywords
aluminium compounds; bulk acoustic wave devices; crystal growth from melt; crystal growth from solution; crystal resonators; dislocation density; elasticity; electric domains; extended defects; gallium compounds; germanium compounds; impurities; inclusions; lanthanum compounds; lithium compounds; piezoelectric materials; point defects; quartz; stacking faults; twinning; vibrational modes; α quartz; AlPO4; BAW; Czochralski method; GaPO4; GeO2; La3Ga5SiO14; LiNbO3; LiTaO3; SiO2; acoustic losses; alkali ions; bulk acoustic wave device; crystalline quality; crystallographic analogs; dislocation density; energy trapping resonators; extended defects; ferroelectric domains; flux crystal growth; growth bands; high-temperature effects; impurities; langasite materials; liquid inclusions; lithium niobate; lithium tantalate; nonlinear elastic effects; piezoelectric devices; piezoelectric materials; planar defects; point defects; solid inclusions; stacking faults; twinning; vibration modes; Acoustics; Crystals; Impurities; Piezoelectric materials; Resonant frequency; Vibrations;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/TUFFC.2012.2287
Filename
6202426
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