• DocumentCode
    1519160
  • Title

    Crystalline quality of the trigonal piezoelectric materials and effects of the extended defects

  • Author

    Capelle, Bernard ; Detaint, Jacques ; Epelboin, Yves

  • Author_Institution
    Inst. de Miner. et de Phys. des Milieux Condenses (IMPMC), Univ. Pierre et Marie Curie-Paris VI, Paris, France
  • Volume
    59
  • Issue
    5
  • fYear
    2012
  • fDate
    5/1/2012 12:00:00 AM
  • Firstpage
    1013
  • Lastpage
    1022
  • Abstract
    Many frequently used or promising piezoelectric materials belong to crystal classes 32 or 3m. Among them are α quartz and its crystallographic analogs (AlPO4, GaPO4, α-GeO2, etc.), the numerous materials of the langasite (La3Ga5SiO14) family and also lithium tantalate (LiTaO3) and lithium niobate (LiNbO3). In this paper we study the present state of the art for these materials, indicate their principal point and extended defects, and present methods to reduce the dislocation density. Large concentrations of intrinsic point defects often exist in crystal grown at very high temperatures. The point defects (intrinsic or related to impurities) modify the constants and can increase the acoustic losses. This is the case for the alkali ions and the OH that induce severe losses in different temperature intervals. The extended defects also affect the performances of the piezoelectric devices. Some, such as twins, ferroelectric domains, or large solid or liquid inclusions, have very detrimental effects. Dislocations, growth bands, and planar defects are more difficult to avoid and affect the devices in a more subtle manner. In quartz and its analogs, dislocations seem to increase the nonlinear elastic effects and have a collective effect on the vibration modes, particularly in energy trapping resonators. Growth bands and stacking faults also produce similar effects.
  • Keywords
    aluminium compounds; bulk acoustic wave devices; crystal growth from melt; crystal growth from solution; crystal resonators; dislocation density; elasticity; electric domains; extended defects; gallium compounds; germanium compounds; impurities; inclusions; lanthanum compounds; lithium compounds; piezoelectric materials; point defects; quartz; stacking faults; twinning; vibrational modes; α quartz; AlPO4; BAW; Czochralski method; GaPO4; GeO2; La3Ga5SiO14; LiNbO3; LiTaO3; SiO2; acoustic losses; alkali ions; bulk acoustic wave device; crystalline quality; crystallographic analogs; dislocation density; energy trapping resonators; extended defects; ferroelectric domains; flux crystal growth; growth bands; high-temperature effects; impurities; langasite materials; liquid inclusions; lithium niobate; lithium tantalate; nonlinear elastic effects; piezoelectric devices; piezoelectric materials; planar defects; point defects; solid inclusions; stacking faults; twinning; vibration modes; Acoustics; Crystals; Impurities; Piezoelectric materials; Resonant frequency; Vibrations;
  • fLanguage
    English
  • Journal_Title
    Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-3010
  • Type

    jour

  • DOI
    10.1109/TUFFC.2012.2287
  • Filename
    6202426