Fabrication of quantum Hall devices for low magnetic fields

Author

Pierz, Klaus ; Schumacher, Bernd

Author_Institution

Phys. Tech. Bundesanstalt, Braunschweig, Germany

Volume

48

Issue

2

fYear

1999

fDate

4/1/1999 12:00:00 AM

Firstpage

293

Lastpage

295

Abstract

The quantized Hall resistance of a two-dimensional electron gas (2DEG) in AlGaAs/GaAs heterostructures is used for the realization of the unit of resistance. This effect is more and more widely used. For possible application even in magnets with magnetic flux densities as low as 6 T, such devices have been produced with carrier concentrations in a range from 2.7×10¹⁵ m^-2 to 5.4×10¹⁵ m^-2 and their metrological quality has been checked. We find that even in low magnetic fields the quantized Hall resistance can be reproduced with highest accuracy

Keywords

III-V semiconductors; aluminium compounds; carrier density; electric resistance measurement; gallium arsenide; quantum Hall effect; semiconductor heterojunctions; two-dimensional electron gas; units (measurement); 6 T; AlGaAs-GaAs; AlGaAs/GaAs heterostructure; carrier concentration; magnetic field; quantized Hall resistance; quantum Hall device; resistance metrology; two-dimensional electron gas; unit; Electrical resistance measurement; Electrons; Fabrication; Gallium arsenide; Geometry; Magnetic field measurement; Magnetic fields; Magnets; Molecular beam epitaxial growth; Substrates;

fLanguage

English

Journal_Title

Instrumentation and Measurement, IEEE Transactions on

Publisher

ieee

ISSN

0018-9456

Type

jour

DOI

10.1109/19.769586

Filename

769586