Radiation Effects on CMOS Image Sensors With Sub-2 $\mu{\rm m}$ Pinned Photodiodes

CMOS image sensor hardness under irradiation is a key parameter for application fields such as space or medical. In this paper, four commercial sensors featuring different technological characteristics (pitch, isolation or buried oxide) have been irradiated with $^{60}{\rm Co}$ source. Based on dark current and temporal noise analysis, we develop and propose a phenomenological model to explain pixel performance degradation.