Self-defined AlAs oxide-current-aperture buried-heterostructure ridge waveguide InGaAs single-quantum-well diode laser

Author

Won-Jin Choi ; Dapkus, P.D.

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

11

Issue

7

fYear

1999

fDate

7/1/1999 12:00:00 AM

Firstpage

773

Lastpage

775

Abstract

Techniques for fabricating a self-defined AlAs oxide-current-aperture that is applicable to very small stripe width edge emitting devices and small aperture vertical-cavity surface-emitting lasers are reported. InGaAs single-quantum-well buried-heterostructure edge-emitting lasers with a self-defined AlAs oxide-current-aperture were fabricated by a three-step metal-organic chemical vapor deposition growth to demonstrate the validity of the process. The AlAs layer for the AlAs oxide was grown by selective area growth techniques. The threshold current and differential quantum efficiency of 3-μm stripe width, 446-μm-long laser were 2 mA and 91%, respectively. The leakage current at -15 V was less than 20 nA.

Keywords

III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser beams; laser cavity resonators; optical fabrication; quantum well lasers; ridge waveguides; semiconductor growth; surface emitting lasers; waveguide lasers; -15 V; 2 mA; 20 nA; 3 mum; 446 mum; 91 percent; AlAs; AlAs layer; AlAs oxide; InGaAs; InGaAs single-quantum-well diode laser; buried-heterostructure ridge waveguide laser; differential quantum efficiency; fabrication; leakage current; selective area growth techniques; self-defined AlAs oxide-current-aperture; single-quantum-well buried-heterostructure edge-emitting lasers; stripe width; stripe width edge emitting devices; three-step metal-organic chemical vapor deposition growth; threshold current; vertical-cavity surface-emitting lasers; Apertures; Chemical lasers; Gallium arsenide; Indium gallium arsenide; Optical surface waves; Optical waveguides; Oxidation; Semiconductor lasers; Surface emitting lasers; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.769703

Filename

769703