Self-defined AlAs oxide-current-aperture buried-heterostructure ridge waveguide InGaAs single-quantum-well diode laser

Techniques for fabricating a self-defined AlAs oxide-current-aperture that is applicable to very small stripe width edge emitting devices and small aperture vertical-cavity surface-emitting lasers are reported. InGaAs single-quantum-well buried-heterostructure edge-emitting lasers with a self-defined AlAs oxide-current-aperture were fabricated by a three-step metal-organic chemical vapor deposition growth to demonstrate the validity of the process. The AlAs layer for the AlAs oxide was grown by selective area growth techniques. The threshold current and differential quantum efficiency of 3-μm stripe width, 446-μm-long laser were 2 mA and 91%, respectively. The leakage current at -15 V was less than 20 nA.