Carrier capture and escape processes in In/sub 0.25/Ga/sub 0.75/As-GaAs quantum-well lasers

We have extracted the ratio between the carrier capture and escape times, /spl eta/, for In/sub 0.25/Ga/sub 0.75/As-GaAs lasers containing one, two, or three quantum wells, from high-frequency subthreshold impedance measurements at different temperatures. Our results show that the carrier capture process dominates over the diffusion along the confinement region in the overall transport/capture process. The obtained value for /spl eta/ is comparable to unity, and this fact has to be taken into account to obtain real material parameters, such as the carrier lifetime and the radiative recombination coefficient.