Title :
2.3-2.7-μm room temperature CW operation of InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers
Author :
Garbuzov, D.Z. ; Lee, H. ; Khalfin, V. ; Martinelli, R. ; Connolly, J.C. ; Belenky, G.L.
Author_Institution :
Sarnoff Corp., Princeton, NJ, USA
fDate :
7/1/1999 12:00:00 AM
Abstract :
A new approach in the design of (Al)InGaAsSb-GaSb quantum-well separate confinement heterostructure (QW-SCH) diode lasers has led to continuous-wave (CW) room-temperature lasing up to 2.7 μm. This has been achieved by using quasiternary heavily strained InGaSb(As) QW´s inside a broad-waveguide SCH laser structure. The QW compositions are chosen in the region outside the miscibility gap and, as a consequence, do not suffer from clustering and composition inhomogeneity normally found with quaternary InGaAsSb compounds of 2.3-2.7-μm spectral range. Very low threshold current density (/spl sim/300 A/cm2) and high CW output powers (>100 mW) were obtained from devices operating in the 2.3-2.6-μm wavelength range.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; gallium compounds; indium compounds; laser beams; quantum well lasers; waveguide lasers; (Al)InGaAsSb-GaSb; 100 mW; 2.3 to 2.7 mum; 298 K; CW output powers; InGaAsSb-AlGaAsSb; InGaAsSb-AlGaAsSb broad waveguide SCH-QW diode lasers; broad-waveguide SCH laser structure; continuous-wave room-temperature lasing; miscibility gap; quantum well compositions; quantum-well separate confinement heterostructure diode lasers; quaternary InGaAsSb compounds; room temperature CW operation; spectral range; threshold current density; wavelength range; Capacitive sensors; Carrier confinement; Diode lasers; Fluctuations; Optical design; Optical materials; Potential well; Quantum well lasers; Temperature; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
