Title :
Fully integrated 10 GHz CMOS VCO
Author :
Do, M.A. ; Zhao, R. ; Yeo, K.S. ; Ma, J.-G.
Author_Institution :
Div. of Circuits & Syst, Nanyang Technol. Univ., Singapore
fDate :
8/2/2001 12:00:00 AM
Abstract :
A differential voltage-controlled oscillator has been designed to operate in the 10 GHz band using a 0.25 μm CMOS process and low Q integrated inductors. The low gain and low Q problems of the components are overcome by the deployment of the cascode configuration with negative conductance generation to enhance the loop gain and Q value. PMOS varactors are used for varying the oscillating frequency from 9.7 to 11.4 GHz. The phase noise at 400 kHz offset is from -101 dB/Hz at the low frequency end to -87 dB/Hz at the high frequency end
Keywords :
CMOS analogue integrated circuits; MMIC oscillators; field effect MMIC; inductors; integrated circuit design; integrated circuit noise; phase noise; voltage-controlled oscillators; 0.25 μm CMOS process; 0.25 mum; 400 kHz offset; 9.7 to 11.4 GHz; PMOS varactors; Q value; cascode configuration; differential voltage-controlled oscillator; fully integrated 10 GHz CMOS VCO; high frequency end; loop gain; low Q integrated inductors; low frequency end; negative conductance generation; oscillating frequency; phase noise;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010689
