DocumentCode :
1520381
Title :
High-power diode lasers with small vertical beam divergence emitting at 808 nm
Author :
Wenzel, H. ; Bugge, F. ; Erbert, G. ; Hülsewede, R. ; Staske, R. ; Trankel, G.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochstfrequenztech., Berlin, Germany
Volume :
37
Issue :
16
fYear :
2001
fDate :
8/2/2001 12:00:00 AM
Firstpage :
1024
Lastpage :
1026
Abstract :
A new waveguiding scheme for high-power diode lasers based on high-index quarter-wave reflecting layers inserted into the cladding layers is presented. For 808 nm lasers, a small vertical far-field angle of 18°, a low threshold current density of 280 A/cm2 and a high conversion efficiency of 50% are simultaneously obtained
Keywords :
laser beams; semiconductor lasers; waveguide lasers; 50 percent; 808 nm; cladding layer; conversion efficiency; far-field angle; high-index quarter-wave reflecting layer; high-power diode laser; threshold current density; vertical beam divergence; waveguide structure;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20010712
Filename :
941809
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1520381
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