Title :
Formation of submicron T-gate by rapid thermally reflowed resist with metal transfer layer
Author :
Meng, C.C. ; Liao, G.R. ; Lu, S.S.
Author_Institution :
Dept. of Electr. Eng., Nat. Chung-Hsing Univ., Taichung, Taiwan
fDate :
8/2/2001 12:00:00 AM
Abstract :
Inexpensive technology for the fabrication of submicron T-gates by using the flowing property of normal 1 μm UV photolithography is reported. The submicron flowing gate process was applied successfully to the fabrication of AlGaAs/InGaAs/GaAs PHEMT field effect transistors
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; microwave field effect transistors; photoresists; rapid thermal annealing; ultraviolet lithography; 1 mum; 21.6 GHz; 26 GHz; 315 mS/mm; AlGaAs-InGaAs-GaAs; AlGaAs/InGaAs/GaAs PHEMT; GaAs; UV photolithography; metal transfer layer; microwave on-wafer S-parameters; peak transconductance; rapid thermally reflowed resist; submicron T-gate fabrication; submicron flowing gate process; unity current gain frequency; unity power gain frequency;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010718
