Title :
Frequency-controlled low-level current source based on charge pumping
Author_Institution :
Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore
fDate :
8/2/2001 12:00:00 AM
Abstract :
The use of the charge pumping in MOSFETs as a low-level DC current source is proposed. Such a current source has some superior characteristics: namely, its output current is proportional to the frequency of input pulses; the output is insensitive to the drift of the pulse voltage (i.e. the drift of the pulse base/top levels); and it has an extremely high input resistance
Keywords :
MOSFET; MOSFET circuits; constant current sources; interface states; MOSFETs; charge pumping; frequency-controlled low-level current source; high input resistance; input pulse frequency; low-level DC current source; output current; pulse voltage drift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010705
