Title :
Utilising Zn segregation at InP/InGaAs interface for as-deposited ohmic contact formation for photonic and electronic device applications
Author :
Zhao, J.H. ; Li, Y. ; Lange, M. ; Cohen, M. ; Olsen, G.H.
Author_Institution :
SiCLAB, Rutgers Univ., Piscataway, NJ, USA
fDate :
8/2/2001 12:00:00 AM
Abstract :
An approach based on Zn segregation at the semiconductor heterointerface in Zn diffusion is proposed for beneficial use in photonic and electronic device fabrication. It is shown that Zn segregation at the semiconductor heterointerface can lead to a substantial increase in surface hole concentration making it possible to fabricate as-deposited ohmic contacts for improved product uniformity and yield
Keywords :
III-V semiconductors; gallium arsenide; hole density; indium compounds; ohmic contacts; photodetectors; semiconductor heterojunctions; surface segregation; zinc; InP/InGaAs interface; InP:Zn-InGaAs; Zn segregation; as-deposited ohmic contact formation; electronic device applications; photodetector structures; photonic device applications; product uniformity; surface hole concentration; yield;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20010680
