Title :
Highly Stable Double-Gate Ga–In–Zn–O Thin-Film Transistor
Author :
Son, Kyoung-Seok ; Jung, Ji-Sim ; Lee, Kwang-Hee ; Kim, Tae-Sang ; Park, Joon-Seok ; Park, KeeChan ; Kwon, Jang-Yeon ; Koo, Bonwon ; Lee, Sang-Yoon
Author_Institution :
Display Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea
Abstract :
We report the electrical stability of double-gate (DG) Ga-In-Zn-O thin-film transistors (TFTs). The threshold voltage (VT) shift of the DG TFT after 3 h of positive-bias temperature stress (VGS = + 20 V, VDS = + 0.1 V, and Temperature = 60°C) is as small as +2.7 V, while that of a conventional single-gate (SG) TFT is +6.6 V. The results of negative-bias temperature stress [(NBTS); VGS = - 20 V, VDS = + 10 V, and Temperature = 60°C] are more dramatic: The VT shift of the DG TFT is only +0.1 V, whereas that of the SG TFT is -9.1 V. With backlight illumination, the VT shift of the SG TFT under the same NBTS becomes severe ( -11.1 V). However, it remains as small as -0.7 V for the DG TFT.
Keywords :
gallium; indium; semiconductor thin films; thin film transistors; zinc; backlight illumination; electrical stability; highly-stable double-gate thin-film transistor; negative-bias temperature stress; positive-bias temperature stress; single-gate TFT; temperature 60 degC; threshold voltage shift; time 3 h; voltage -11.1 V; voltage -9.1 V; voltage 0.1 V; voltage 10 V; voltage 2.7 V; voltage 20 V; voltage 6.6 V; Double gate (DG); Ga–In–Zn–O (GIZO); stability; thin-film transistor (TFT); threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2010.2050294
