DocumentCode :
1520538
Title :
Effect of Program/Erase Speed on Switching Uniformity in Filament-Type RRAM
Author :
Shin, Jungho ; Park, Jubong ; Lee, Joonmyoung ; Park, Sangsu ; Kim, Seonghyun ; Lee, Wootae ; Kim, Insung ; Lee, Daeseok ; Hwang, Hyunsang
Author_Institution :
Sch. of Mater. Sci. & Eng., Gwangju Inst. of Sci. & Technol., Gwangju, South Korea
Volume :
32
Issue :
7
fYear :
2011
fDate :
7/1/2011 12:00:00 AM
Firstpage :
958
Lastpage :
960
Abstract :
We investigated the effect of program/erase speed on switching uniformity in filament-type resistive memory with Mo/SiOx/Pt structure. The RRAM device exhibits a large on/off ratio (>; 105), good data retention properties even at 200°C, and stable pulse-switching endurance up to 106 cycles. In comparison with slow switching operation, fast switching operation achieves more uniform program/erase performance in filament-type resistive memory. In order to determine the relationship between the switching speed and the uniformity, we carried out an effective analysis of real pulse operation.
Keywords :
random-access storage; data retention property; filament-type RRAM; filament-type resistive memory; program/erase speed; switching uniformity; Electrodes; Resistance; Schottky diodes; Silicon; Switches; RRAM; switching speed; switching uniformity;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2011.2147274
Filename :
5771045
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1520538
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