مرکز منطقه ای اطلاع رساني علوم و فناوري - Top-Gate Low-Threshold Voltage <formula formulatype="inline"> <img src="/images/tex/19379.gif" alt="p\\hbox {-}\\hbox {Cu}_{2} \\hbox {O}"> </formula> Thin-Film Transistor Grown on <formula formulatype="inline"> <img src="/images/tex/19380.gif" alt="\\hbo

Title :

Top-Gate Low-Threshold Voltage $p\\hbox {-}\\hbox {Cu}_{2} \\hbox {O}$ Thin-Film Transistor Grown on $\\hbo</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Zou, Xiao ; Fang, Guojia ; Yuan, Longyan ; Li, Meiya ; Guan, Wenjie ; Zhao, Xingzhong</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Author_Institution : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Dept. of Electron. Sci. & Technol., Wuhan Univ., Wuhan, China</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Volume : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>31</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Issue : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>8</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>fYear : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>2010</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Firstpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>827</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Lastpage : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>829</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Abstract : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Copper oxide (Cu<i>x</i>O) thin films were grown on SiO<sub>2</sub>/Si substrate by pulsed laser deposition under different substrate temperatures. Top-gate Cu<i>x</i> O semiconductor thin-film transistors (TFTs) were fabricated with high- κ HfON as gate dielectric. The performance of Cu<sub>2</sub>O TFTs was improved due to increased Hall mobility resulting from the decreased scattering of both the ionized defects and the grain boundary for Cu<sub>2</sub>O channel films. The <i>p</i>-channel pure polycrystalline Cu<sub>2</sub>O TFTs (<i>W</i>/<i>L</i> = 500 μm/20 μm) exhibited a low threshold voltage of -0.8 V, an on-off current ratio of 3 x 10<sup>6</sup>, a saturation mobility of 4.3 cm<sup>2</sup>/ V s, and a subthreshold swing of 0.18 V/decade.</div> </div> <div class='row'> <div class='leftDiv labelDiv col-xs-4 col-sm-2 fullRecLabelEnglish'>Keywords : </div><div class='valueDiv leftDirection leftAlign col-xs-8 col-sm-10 fullRecValueEnglish'>Hall mobility; copper compounds; hafnium compounds; high-k dielectric thin films; pulsed laser deposition; semiconductor growth; semiconductor thin films; silicon compounds; thin film transistors; Cu<sub>2</sub>O; Hall mobility; HfON; SiO<sub>2</sub>-Si; grain boundary; high-k gate dielectric; pchannel pure polycrystalline TFT; pulsed laser deposition; thin film transistor; top gate low threshold voltage; top gate semiconductor thin film transistors; HfON; polycrystalline <formula formulatype=$ $hbox{Cu}_{2} hbox{O}$; thin-film transistors (TFTs); threshold voltage;