• DocumentCode
    1520555
  • Title

    Top-Gate Low-Threshold Voltage p\\hbox {-}\\hbox {Cu}_{2} \\hbox {O} Thin-Film Transistor Grown on \\hbo</h1></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author</span></div><div class='col-12 col-md-9 leftDirection leftAlign'><h2 class='mb-0 fw-semibold'>Zou, Xiao ; Fang, Guojia ; Yuan, Longyan ; Li, Meiya ; Guan, Wenjie ; Zhao, Xingzhong</h2></div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Author_Institution</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Dept. of Electron. Sci. & Technol., Wuhan Univ., Wuhan, China</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Volume</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>31</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Issue</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>8</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>fYear</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>2010</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Firstpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>827</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Lastpage</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>829</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Abstract</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Copper oxide (Cu<i>x</i>O) thin films were grown on SiO<sub>2</sub>/Si substrate by pulsed laser deposition under different substrate temperatures. Top-gate Cu<i>x</i> O semiconductor thin-film transistors (TFTs) were fabricated with high- κ HfON as gate dielectric. The performance of Cu<sub>2</sub>O TFTs was improved due to increased Hall mobility resulting from the decreased scattering of both the ionized defects and the grain boundary for Cu<sub>2</sub>O channel films. The <i>p</i>-channel pure polycrystalline Cu<sub>2</sub>O TFTs (<i>W</i>/<i>L</i> = 500 μm/20 μm) exhibited a low threshold voltage of -0.8 V, an on-off current ratio of 3 x 10<sup>6</sup>, a saturation mobility of 4.3 cm<sup>2</sup>/ V s, and a subthreshold swing of 0.18 V/decade.</div></div> </li> <li class='list-group-item border-0 py-3 px-0'> <div class='row g-0 align-items-center mb-2'><div class='col-12 col-md-3 fullRecLabelEnglish fw-bold mb-2 mb-md-0'><span class='text-muted small'>Keywords</span></div><div class='col-12 col-md-9 leftDirection leftAlign'>Hall mobility; copper compounds; hafnium compounds; high-k dielectric thin films; pulsed laser deposition; semiconductor growth; semiconductor thin films; silicon compounds; thin film transistors; Cu<sub>2</sub>O; Hall mobility; HfON; SiO<sub>2</sub>-Si; grain boundary; high-k gate dielectric; pchannel pure polycrystalline TFT; pulsed laser deposition; thin film transistor; top gate low threshold voltage; top gate semiconductor thin film transistors; HfON; polycrystalline <formula formulatype=$hbox{Cu}_{2} hbox{O}$; thin-film transistors (TFTs); threshold voltage;

  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2010.2050576
  • Filename
    5491061
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1520555