DocumentCode :
1520567
Title :
10-GHz AlGaInAs/InP 1.55- 
m Passively Mode-Locked Laser With Low Divergence Angle and Timing Jitter
Author :
Hou, Lianping ; Haji, Mohsin ; Qiu, Bocang ; Akbar, Jehan ; Bryce, A. Catrina ; Marsh, John H.
Author_Institution :
Sch. of Eng., Univ. of Glasgow, Glasgow, UK
Volume :
23
Issue :
15
fYear :
2011
Firstpage :
1079
Lastpage :
1081
Abstract :
We present a 10-GHz 1.55-μm passively mode-locked laser based on a novel AlGalnAs/InP epitaxial structure with a three-quantum-well active layer incorporating a passive far-field reduction layer. The device generated 1.06 ps pulses with a state-of-art timing jitter value of 194 fs (4-80 MHz), and a radio-frequency linewidth of 2 kHz, while demonstrating a low divergence angle (14.7° × 27.3°) with a twofold butt coupling efficiency to a flat cleaved single-mode fiber, compared to conventional five-quantum-well mode-locked lasers.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; laser mode locking; semiconductor lasers; timing jitter; AlGaInAs-InP; coupling efficiency; divergence angle; five-quantum-well mode-locked lasers; flat cleaved single-mode fiber; frequency 10 GHz; passive far-field reduction layer; passively mode-locked laser; three-quantum-well active layer; timing jitter; wavelength 1.55 mum; Laser mode locking; Optical device fabrication; Optical waveguides; Radio frequency; Semiconductor lasers; Timing jitter; Waveguide lasers; Divergence angle; mode-locked laser; radio-frequency linewidth; timing jitter;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2156403
Filename :
5771049
Link To Document :
