DocumentCode :
1520587
Title :
Packaged, High-Power, Narrow-Linewidth Slab-Coupled Optical Waveguide External Cavity Laser (SCOWECL)
Author :
Loh, William ; Donnell, Frederick J O ; Plant, Jason J. ; Brattain, Michael A. ; Missaggia, Leo J. ; Juodawlkis, Paul W.
Author_Institution :
Lincoln Lab., MIT, Lexington, MA, USA
Volume :
23
Issue :
14
fYear :
2011
fDate :
7/15/2011 12:00:00 AM
Firstpage :
974
Lastpage :
976
Abstract :
We report the demonstration of an InGaAlAs/InP quantum-well, high-power, low-noise packaged semiconductor external cavity laser (ECL) operating at 1550 nm. The laser comprises a double-pass, curved-channel slab-coupled optical waveguide amplifier (SCOWA) coupled to a narrow-bandwidth (2.5 GHz) fiber Bragg grating passive cavity using a lensed-fiber. At a bias current of 4 A, the ECL produces 370 mW of fiber-coupled output power with a Voigt lineshape having Gaussian and Lorentzian linewidths of 35 and 1 kHz, respectively, and relative intensity noise <; -160 dB/Hz from 200 kHz to 10 GHz.
Keywords :
Bragg gratings; Gaussian processes; III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; laser cavity resonators; laser noise; optical fibre amplifiers; quantum well lasers; semiconductor quantum wells; spectral line breadth; surface emitting lasers; Gaussian linewidth; InGaAlAs-InP; Lorentzian linewidth; Voigt lineshape; current 4 A; double-pass optical waveguide amplifier; high-power semiconductor laser; laser noise; narrow-bandwidth fiber Bragg grating passive cavity; narrow-linewidth slab-coupled optical waveguide external cavity laser; power 370 mW; wavelength 1550 nm; Laser noise; Optical fiber amplifiers; Semiconductor lasers; Waveguide lasers; Optical waveguides; power lasers; quantum-well lasers; semiconductor lasers;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2011.2146245
Filename :
5771051
Link To Document :
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