Title :
Degradation Assessment in IGBT Modules Using Four-Point Probing Approach
Author :
Pedersen, Kristian Bonderup ; Kristensen, Peter Kjaer ; Popok, Vladimir ; Pedersen, Kjeld
Author_Institution :
Dept. of Phys. & Nanotechnol., Aalborg Univ., Aalborg, Denmark
Abstract :
Four-point probing of electrical parameters on various components of IGBT modules is suggested as an approach for the estimation of degradation in stressed devices. By comparison of these parameters for stressed and new components one can evaluate an overall degradation of the module and find out the wear state of individual components. This knowledge can be applied for preventing early failures and for optimization of the device design. The method is presented by regarding a standard type power module subjected to power cycling.
Keywords :
insulated gate bipolar transistors; power semiconductor devices; IGBT modules; degradation assessment; degradation estimation; electrical parameters; four-point probing approach; power cycling; standard type power module; Current measurement; Degradation; Insulated gate bipolar transistors; Metallization; Resistance; Semiconductor device measurement; Wires; Four-point probing; interconnections; physics-of-failure; power modules; thermo-mechanical degradation;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2014.2344174
