DocumentCode
1520604
Title
Improved Resistance Switching Characteristics in Ti-Doped 
for Resistive Nonvolatile Memory Devices
Author
Mondal, Somnath ; Her, Jim-Long ; Chen, Fa-Hsyang ; Shih, Shao-Ju ; Pan, Tung-Ming
Author_Institution
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
Volume
33
Issue
7
fYear
2012
fDate
7/1/2012 12:00:00 AM
Firstpage
1069
Lastpage
1071
Abstract
A conventional approach of doping to control the bistable resistance switching in Yb2O3 was investigated for nonvolatile memory applications. With the help of Ti doping into oxide films during the process, better cycle-to-cycle resistance distribution and switching voltage uniformity were found due to modulation of current conduction mechanism from space-charge-limited current in Yb2O3 to Schottky type in YbTiOx. The program/erase cycles with successive readout operation over 105 cycles can be achieved without any degradation. No data loss was found upon continuous readout process at both room temperature and 85°C. The Ni/YbTiOx/TaN memory is a promising candidate to be integrated into future memory processes.
Keywords
modulation; random-access storage; space-charge-limited conduction; titanium; ytterbium compounds; Schottky type; Yb2O3:Ti; continuous readout processing; current conduction mechanism modulation; cycle-to-cycle resistance distribution; data loss; improved bistable resistance switching characteristic; program-erase cycle; resistive nonvolatile memory device; space-charge-limited current; successive readout operation; switching voltage uniformity; temperature 293 K to 298 K; temperature 85 degC; Doping; Electron devices; Materials; Nickel; Nonvolatile memory; Resistance; Switches; $hbox{YbTiO}_{x}$ $hbox{Yb}_{2}hbox{O}_{3}$
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2012.2196672
Filename
6203359
Link To Document