DocumentCode :
1520611
Title :
Size-Dependent-Transport Study of 
Gate-All-Around Nanowire MOSFETs: Impact of Quantum Confinement and Volume Inversion
Author :
Gu, Jiangjiang J. ; Wu, Heng ; Liu, Yiqun ; Neal, Adam T. ; Gordon, Roy G. ; Ye, Peide D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Purdue Univ., West Lafayette, IN, USA
Volume :
33
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
967
Lastpage :
969
Abstract :
InGaAs gate-all-around nanowire MOSFETs with channel length down to 50 nm have been experimentally demonstrated by a top-down approach. The nanowire size-dependent transport properties have been systematically investigated. It is found that reducing nanowire dimension leads to higher on-current, transconductance, and effective mobility due to stronger quantum confinement and the volume-inversion effect. TCAD quantum mechanical simulation has been carried out to study the inversion charge distribution inside the nanowires. Volume-inversion effect appears at a larger dimension for InGaAs nanowire MOSFET than its Si counterpart.
Keywords :
III-V semiconductors; MOSFET; gallium arsenide; nanoelectronics; nanowires; In0.53Ga0.47As; TCAD quantum mechanical simulation; channel length; gate-all-around nanowire MOSFET; inversion charge distribution; nanowire size-dependent transport property; quantum confinement; size 50 nm; top-down approach; transconductance; volume inversion effect; Fabrication; Indium gallium arsenide; Logic gates; MOSFETs; Nanobioscience; Nanoscale devices; Silicon; Gate-all-around (GAA); InGaAs; nanowire;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2194690
Filename :
6203360
Link To Document :
