DocumentCode :
1520784
Title :
Enhancing Electron-Emission Efficiency of MIM Tunneling Cathodes by Reducing Insulator Trap Density
Author :
Suzuki, M. ; Sagawa, Masakazu ; Kusunoki, Takashi ; Nishimura, E. ; Ikeda, Makoto ; Tsuji, Keita
Author_Institution :
Hitachi Research Laboratory, Hitachi, Ltd., Ibaraki, Japan
Volume :
59
Issue :
8
fYear :
2012
Firstpage :
2256
Lastpage :
2262
Abstract :
Metal–insulator–metal (MIM) tunneling cathodes demonstrate electron-emission efficiency (\\alpha ) of 9 % to 11 % . This threefold increase in \\alpha from that previously reported is achieved by reducing trap density in the cathodes\´ insulator, thereby enabling tunneling electrons to accelerate with fewer scatterings in the insulator. Life tests show that the high \\alpha is maintained for a 19 000-h operation in sealed display panels containing a ZnS-based phosphor. The reduction of trap density also suppresses long-term drifts in emission and diode currents to a satisfactory level. These emission characteristics are sufficient for realizing a large-sized field-emission display with MIM cathodes. In addition, an effective method for measuring trap density in the insulator of MIM devices is devised. This method adopts low-stress I V measurement following charge-injection stress. Measurement by this method reveals that trap density is proportional to neodymium concentration in the anodized insulator. The trap density is therefore reduced by lowering the neodymium content in the precursor Al–Nd alloy film. Moreover, the robustness of the MIM cathodes to charge-injection stress is demonstrated.
Keywords :
Cathodes; Current measurement; Electron traps; Insulators; Neodymium; Tunneling; Displays; metal–insulator–metal (MIM) devices; trap measurement; tunneling cathode; vacuum microelectronics;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2012.2197625
Filename :
6203398
Link To Document :
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