DocumentCode
1520790
Title
Some Semiconductor Device Physics Considerations and Clarifications
Author
Yang, Xuan ; Schroder, Dieter K.
Author_Institution
Sch. of Electr., Comput., & Energy Eng., Arizona State Univ., Tempe, AZ, USA
Volume
59
Issue
7
fYear
2012
fDate
7/1/2012 12:00:00 AM
Firstpage
1993
Lastpage
1996
Abstract
We present some clarifications of band diagrams, quasi-Fermi levels, and the channel shape of metal-oxide-semiconductor field-effect transistors that are frequently misrepresented in textbooks. We consider both simple first-order calculations and detailed computer simulations to show how these parameters are better represented.
Keywords
Fermi level; MOSFET; band diagram; channel shape; first-order calculation; metal-oxide-semiconductor field-effect transistors; quasiFermi level; semiconductor device physics; Educational institutions; MOSFETs; P-n junctions; Shape; Silicon; Substrates; Metal–oxide–semiconductor field-effect transistors; quasi-Fermi levels; semiconductor device modeling;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/TED.2012.2195011
Filename
6203399
Link To Document