Title :
Some Semiconductor Device Physics Considerations and Clarifications
Author :
Yang, Xuan ; Schroder, Dieter K.
Author_Institution :
Sch. of Electr., Comput., & Energy Eng., Arizona State Univ., Tempe, AZ, USA
fDate :
7/1/2012 12:00:00 AM
Abstract :
We present some clarifications of band diagrams, quasi-Fermi levels, and the channel shape of metal-oxide-semiconductor field-effect transistors that are frequently misrepresented in textbooks. We consider both simple first-order calculations and detailed computer simulations to show how these parameters are better represented.
Keywords :
Fermi level; MOSFET; band diagram; channel shape; first-order calculation; metal-oxide-semiconductor field-effect transistors; quasiFermi level; semiconductor device physics; Educational institutions; MOSFETs; P-n junctions; Shape; Silicon; Substrates; Metal–oxide–semiconductor field-effect transistors; quasi-Fermi levels; semiconductor device modeling;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2012.2195011
