DocumentCode :
1521069
Title :
Power semiconductors: Fast, tough, and compact: MOS field-effect transistors and gate turnoff thyristors are bringing new levels of performance in switching frequencies and current and voltage ratings
Author :
Chen, Dan Y.
Author_Institution :
Virginia Polytechnic Institute and State University
Volume :
24
Issue :
9
fYear :
1987
Firstpage :
30
Lastpage :
35
Abstract :
The silicon-controlled rectifier (SCR) may not be on its way out, but it is certainly being challenged by a number of semiconductor devices. More efficient, easier to control, and switching faster than the SCR, they are replacing that old standby in a variety of applications.
Keywords :
Insulated gate bipolar transistors; Logic gates; Power MOSFET; Resistance; Thyristors; Transistors;
fLanguage :
English
Journal_Title :
Spectrum, IEEE
Publisher :
ieee
ISSN :
0018-9235
Type :
jour
DOI :
10.1109/MSPEC.1987.6448932
Filename :
6448932
Link To Document :
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