A 20-GHz InP-HBT voltage-controlled oscillator with wide frequency tuning range

Author

Djahanshahi, Hormoz ; Saniei, Namdar ; Voinigescu, Sorin P. ; Malikpaard, M.C. ; Salama, C. André T

Volume

49

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1566

Lastpage

1572

Abstract

This paper presents the design and implementation of a 20-GHz-band differential voltage-controlled oscillator (VCO) using InP heterojunction-bipolar-transistor process technology. Aimed at 20- or 40-Gb/s fiber-optic applications, the design is based on a single-stage feedback amplifier with no intentional L or C. The salient features of the proposed VCO are wide frequency tuning range compared to LC oscillators, and low power consumption and transistor count compared to ring-oscillator counterparts. The implemented VCO has an adjustable frequency range from 13.75 to 21.5 GHz and provides two complementary outputs. Total power consumption at 18.6 GHz is 130 mW, while the phase noise is -90.0 dBc/Hz measured at 1-MHz offset frequency

Keywords

III-V semiconductors; bipolar transistor circuits; circuit tuning; feedback oscillators; heterojunction bipolar transistors; indium compounds; low-power electronics; phase noise; voltage-controlled oscillators; 130 mW; 20 GHz; InP; InP heterojunction bipolar transistor; differential voltage controlled oscillator; frequency tuning range; phase noise; power consumption; single-stage feedback amplifier; transistor count; Energy consumption; Feedback amplifiers; Frequency measurement; Indium phosphide; Noise measurement; Phase noise; Power measurement; Ring oscillators; Tuning; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.942568

Filename

942568