Title :
High-temperature sigma-delta modulator in thin-film fully-depleted SOI technology
Author :
Viviani, A. ; Flandre, D. ; Jespers, P.
Author_Institution :
Microelectron. Lab., Katholieke Univ., Leuven, Belgium
fDate :
4/29/1999 12:00:00 AM
Abstract :
A second-order sigma-delta (ΣΔ) modulator for high-temperature (HT) applications is presented. The modulator exploits the advantages of the fully-depleted (FD) SOI CMOS technology as well as a dedicated design procedure in order to extend the temperature range of classical architectures up to 300°C, thereby avoiding compensation circuits which add to the power dissipation
Keywords :
CMOS integrated circuits; circuit stability; high-temperature electronics; sigma-delta modulation; silicon-on-insulator; 2 micron; 300 C; SOI CMOS technology; dedicated design procedure; high-temperature sigma-delta modulator; second-order ΣΔ modulator; thin-film fully-depleted SOI technology;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990513
