DocumentCode
1521351
Title
Probing Buried Defects in Extreme Ultraviolet Multilayer Blanks Using Ultrasound Holography
Author
Shekhawat, Gajendra S. ; Avasthy, Shraddha ; Srivastava, Arvind K. ; Tark, Soo-Hyun ; Dravid, Vinayak P.
Author_Institution
Int. Inst. for Nanotechnol. & the Atomicand Nanoscale Characterization Exp. Center, Northwestern Univ., Evanston, IL, USA
Volume
9
Issue
6
fYear
2010
Firstpage
671
Lastpage
674
Abstract
Imaging high-resolution subsurface defects nondestructively in Mo-Si multilayer (ML) blanks used in extreme ultraviolet lithography is a challenge and no known metrology tools are available to identify such defects in a nondestructive way. The understanding of their growth mechanism during ML deposition necessitates the monitoring of these defects, which can then lead to fabricating defect-free ML blanks. Here, we report for the first time, a unique and novel application of scanning near-field ultrasound holography (SNFUH) in nondestructive imaging of high-resolution e-beam patterned lines and bumps buried under Mo/Si ML film stacks used for ultraviolet lithography. Our results indicate the successful identification of buried defects under ML blanks using SNFUH.
Keywords
acoustic holography; flaw detection; molybdenum; optical multilayers; optical testing; silicon; ultrasonic imaging; ultraviolet lithography; Mo-Si; bumps; buried defects; extreme ultraviolet lithography; high-resolution e-beam patterned lines; high-resolution subsurface defects; multilayer blanks; nondestructive imaging; scanning near-field ultrasound holography; High-resolution imaging; Holography; Image resolution; Lithography; Metrology; Monitoring; Nonhomogeneous media; Semiconductor films; Ultrasonic imaging; Ultraviolet sources; Defect detection; metrology; near field; ultrasonics;
fLanguage
English
Journal_Title
Nanotechnology, IEEE Transactions on
Publisher
ieee
ISSN
1536-125X
Type
jour
DOI
10.1109/TNANO.2010.2053556
Filename
5491187
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