DocumentCode :
1521351
Title :
Probing Buried Defects in Extreme Ultraviolet Multilayer Blanks Using Ultrasound Holography
Author :
Shekhawat, Gajendra S. ; Avasthy, Shraddha ; Srivastava, Arvind K. ; Tark, Soo-Hyun ; Dravid, Vinayak P.
Author_Institution :
Int. Inst. for Nanotechnol. & the Atomicand Nanoscale Characterization Exp. Center, Northwestern Univ., Evanston, IL, USA
Volume :
9
Issue :
6
fYear :
2010
Firstpage :
671
Lastpage :
674
Abstract :
Imaging high-resolution subsurface defects nondestructively in Mo-Si multilayer (ML) blanks used in extreme ultraviolet lithography is a challenge and no known metrology tools are available to identify such defects in a nondestructive way. The understanding of their growth mechanism during ML deposition necessitates the monitoring of these defects, which can then lead to fabricating defect-free ML blanks. Here, we report for the first time, a unique and novel application of scanning near-field ultrasound holography (SNFUH) in nondestructive imaging of high-resolution e-beam patterned lines and bumps buried under Mo/Si ML film stacks used for ultraviolet lithography. Our results indicate the successful identification of buried defects under ML blanks using SNFUH.
Keywords :
acoustic holography; flaw detection; molybdenum; optical multilayers; optical testing; silicon; ultrasonic imaging; ultraviolet lithography; Mo-Si; bumps; buried defects; extreme ultraviolet lithography; high-resolution e-beam patterned lines; high-resolution subsurface defects; multilayer blanks; nondestructive imaging; scanning near-field ultrasound holography; High-resolution imaging; Holography; Image resolution; Lithography; Metrology; Monitoring; Nonhomogeneous media; Semiconductor films; Ultrasonic imaging; Ultraviolet sources; Defect detection; metrology; near field; ultrasonics;
fLanguage :
English
Journal_Title :
Nanotechnology, IEEE Transactions on
Publisher :
ieee
ISSN :
1536-125X
Type :
jour
DOI :
10.1109/TNANO.2010.2053556
Filename :
5491187
Link To Document :
بازگشت