DocumentCode :
1521401
Title :
Correlation Between Random Telegraph Noise and 
Noise Parameters in 28-nm pMOSFETs With Tip-Shaped SiGe Source/Drain
Author :
Wang, Bo Chin ; Wu, San Lein ; Huang, Chien Wei ; Lu, Yu Ying ; Chang, Shoou Jinn ; Lin, Yu Min ; Lee, Kun Hsien ; Cheng, Osbert
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
Volume :
33
Issue :
7
fYear :
2012
fDate :
7/1/2012 12:00:00 AM
Firstpage :
928
Lastpage :
930
Abstract :
The random telegraph noise (RTN) characteristics of 28-nm pMOSFETs with tip-shaped SiGe source/drain have been investigated. RTN analysis found that strained devices undergo higher compressive strain; the trap position from the Si/SiO2 interface is reduced, because of the closer trap energy level near the valence band. Although tip-shaped SiGe process induces higher oxide trap density, the trap position corresponding to the tunneling attenuation length (λ) may result in lower 1/f noise level in tip-shaped SiGe S/D devices as compared with that of control devices.
Keywords :
1/f noise; Ge-Si alloys; MOSFET; random noise; telegraphy; tunnelling; 1/f noise parameter; RTN parameter; SiGe; closer trap energy level; compressive strain device; oxide trap density; pMOSFET; random telegraph noise parameter; size 28 nm; tip-shaped source-drain; trap position; tunneling attenuation length; valence band; Logic gates; MOSFETs; Noise; Silicon; Silicon germanium; Tunneling; pMOSFET; random telegraph noise (RTN); tip-shaped SiGe source/drain (S/D);
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2012.2195290
Filename :
6203555
Link To Document :
