Title :
A Broadband 835–900-GHz Fundamental Balanced Mixer Based on Monolithic GaAs Membrane Schottky Diodes
Author :
Thomas, Bertrand ; Maestrini, Alain ; Gill, John ; Lee, Choonsup ; Lin, Robert ; Mehdi, Imran ; De Maagt, Peter
Author_Institution :
Jet Propulsion Lab. (JPL), California Inst. of Technol., Pasadena, CA, USA
fDate :
7/1/2010 12:00:00 AM
Abstract :
The development of a 835-900-GHz biasable fundamental balanced mixer using planar GaAs Schottky diodes is presented. The monolithic microwave integrated circuit integrates two planar Schottky anodes in a balanced configuration, stripline filtering elements, and on-chip capacitor on a thin GaAs membrane. At 850 GHz, double side-band (DSB) mixer noise temperature of 2660 K and conversion loss of 9.25 dB are measured, respectively, at room temperature. When the mixer is cooled to 120 K, the DSB mixer noise temperature and conversion loss improve to 1910 K and 8.84 dB, respectively.
Keywords :
III-V semiconductors; MMIC mixers; Schottky diode mixers; capacitors; gallium arsenide; submillimetre wave diodes; submillimetre wave mixers; DSB mixer noise temperature; GaAs; broadband fundamental balanced mixer; double-side band mixer; frequency 835 GHz to 900 GHz; loss 8.84 dB; loss 9.25 dB; monolithic gallium arsenide membrane Schottky diodes; monolithic microwave integrated circuit; on-chip capacitor; planar Schottky anodes; stripline filtering elements; temperature 120 K; temperature 1910 K; temperature 2660 K; Cryogenic test bench; fundamental balanced mixer (FBM); monolithic microwave integrated circuit (MMIC); passive cooling; planar Schottky diode; submillimeter wavelengths; vacuum chamber;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
DOI :
10.1109/TMTT.2010.2050181
