DocumentCode :
1521639
Title :
7 W CW power from tensile-strained GaAsyP1-y/AlGaAs (λ=735 nm) QW diode lasers
Author :
Knauer, A. ; Erbert, G. ; Wenzel, H. ; Bhattacharya, A. ; Bugge, F. ; Maege, J. ; Pittroff, W. ; Sebastian, J.
Author_Institution :
Ferdinand-Braun-Inst. fur Hochfrequenztech., Berlin, Germany
Volume :
35
Issue :
8
fYear :
1999
fDate :
4/15/1999 12:00:00 AM
Firstpage :
638
Lastpage :
639
Abstract :
100 μm-stripe lasers with a tensile-strained GaAsyP 1-y quantum well embedded in a low-loss AlGaAs large-optical-cavity structure provide a record-high CW power of 7 W at 735 nm from 2 mm-long devices. The transverse beam pattern has a narrow 25° beamwidth. Reliability tests at the 0.5 W CW power level suggest lifetimes >104 h
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; quantum well lasers; 7 W; 735 nm; AlGaAs large optical cavity; CW power; GaAsyP1-y/AlGaAs quantum well diode laser; GaAsP-AlGaAs; lifetime; reliability; stripe laser; tensile strain; transverse beam pattern;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19990465
Filename :
771003
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=1521639
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