Title :
AlGaAs/GaAs quantum wire lasers fabricated by flow rate modulation epitaxy
Author :
Kim, T.G. ; Wang, X.L. ; Komori, K. ; Hikosaka, K. ; Ogura, M.
Author_Institution :
Electrotech. Lab., Ibaraki, Japan
fDate :
4/15/1999 12:00:00 AM
Abstract :
AlGaAs/GaAs quantum wire lasers, with three quantum wires (QWRs) of almost identical physical size, have been fabricated by flow rate modulation epitaxy. Room temperature lasing from the ground state electron and heavy-hole (le-lhh) transition of the QWRs has been observed for the first time. Typical threshold currents of 6 mA and extremely minor wavelength shifts in emission spectra have been obtained
Keywords :
aluminium compounds; AlGaAs-GaAs; AlGaAs/GaAs quantum wire laser; emission spectra; flow rate modulation epitaxy; ground state electron-heavy-hole transition; threshold current; wavelength shift;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19990458
