Title :
Oscillatory characteristic temperature of InAs quantum-dot laser
Author :
Chang, Chin-An ; Fei-Chang Hwan ; Wu, Zheng-Ru ; Wang, Pai-Yung
Author_Institution :
Opto-Electron. & Syst. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
Abstract :
An InAs quantum-dot laser showed continuous-wave lasing up to 323 K. A high T/sub 0/ of over 1000 K was measured below 130 K. The value of T/sub 0/ rapidly declined at higher temperatures, and showed an oscillatory behavior above 250 K. The oscillatory changes of T/sub 0/ were accompanied by alternating change in the light output versus current curves above the threshold, suggesting possible participation of higher states in lasing.
Keywords :
III-V semiconductors; electroluminescence; indium compounds; quantum well lasers; semiconductor quantum wells; 100 to 323 K; GaAs; InAs quantum-dot laser; InAs-GaAs; continuous-wave lasing; electroluminescence spectra; higher states; light output versus current curves; oscillatory characteristic temperature; Current measurement; Distributed Bragg reflectors; Gallium arsenide; Optical materials; Particle measurements; Quantum dot lasers; Surface emitting lasers; Temperature; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Photonics Technology Letters, IEEE
