• DocumentCode
    1521756
  • Title

    Electrothermal characterisation of high power microwave silicon bipolar transistor

  • Author

    Bouysse, P. ; Quéré, R. ; Villotte, J.P. ; Carves-Bideaux, N. ; Coupat, J.M.

  • Author_Institution
    CNRS, IRCOM, France
  • Volume
    35
  • Issue
    8
  • fYear
    1999
  • fDate
    4/15/1999 12:00:00 AM
  • Firstpage
    666
  • Lastpage
    667
  • Abstract
    An original approach to extracting the thermal equivalent circuits of bipolar transistors is described. This work is based on specific pulsed, DC and thermal measurements that allow various thermal time constants effects to be separated. The proposed modelling method is applied to determine the thermal behaviour of a high power microwave silicon bipolar transistor
  • Keywords
    silicon; Si; Si bipolar transistor; electrothermal characterisation; high power bipolar transistor; modelling method; power microwave bipolar transistor; thermal equivalent circuit extraction; thermal time constants effects;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990473
  • Filename
    771022
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1521756