• DocumentCode
    1521786
  • Title

    Optimum MOS power matching by exploiting non-quasistatic effect

  • Author

    Janssens, J. ; Steyaert, M.

  • Author_Institution
    ESAT, Katholieke Univ., Leuven, Heverlee, Belgium
  • Volume
    35
  • Issue
    8
  • fYear
    1999
  • fDate
    4/15/1999 12:00:00 AM
  • Firstpage
    672
  • Lastpage
    673
  • Abstract
    Low-noise and power amplifiers commonly use inductive degeneration to match the inherently capacitive MOS device to the source impedance R S. It is shown how this matching technique can be refined by incorporating the non-quasistatic effect and further improved so as to strongly increase the gain. It is shown that the maximum gain is achieved by matching the source impedance RS to the intrinsic gate resistance embodying the non-quasistatic effect
  • Keywords
    MOSFET; impedance matching; power amplifiers; radiofrequency amplifiers; MOS device; gain; gate resistance; inductive degeneration; low-noise amplifier; nonquasistatic effect; power amplifier; power matching; source impedance;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19990432
  • Filename
    771026
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1521786