Optimum MOS power matching by exploiting non-quasistatic effect

Low-noise and power amplifiers commonly use inductive degeneration to match the inherently capacitive MOS device to the source impedance R _S. It is shown how this matching technique can be refined by incorporating the non-quasistatic effect and further improved so as to strongly increase the gain. It is shown that the maximum gain is achieved by matching the source impedance R_S to the intrinsic gate resistance embodying the non-quasistatic effect