Transfer of GaSb thin film to insulating substrate via separation by hydrogen implantation

Thin films of GaSb were transferred to insulating substrates by a combination of wafer bonding and separation by hydrogen ion implantation. Hydrogen ion implantation and exfoliation were successfully exploited to transfer a 240 nm thick GaSb film to a glass substrate at temperatures ⩽150°C. A novel room temperature wafer bonding technique utilising an ultraviolet/ozone process was also demonstrated. The films have been characterised by atomic force and scanning electron microscopies