DocumentCode :
1522007
Title :
Slow Light Propagation in Liquid-Crystal Infiltrated Silicon-On-Insulator Photonic Crystal Channel Waveguides
Author :
Rawal, Swati ; Sinha, R.K. ; De La Rue, Richard M.
Author_Institution :
Dept. of Appl. Phys., Delhi Technol. Univ., Delhi, India
Volume :
28
Issue :
17
fYear :
2010
Firstpage :
2560
Lastpage :
2571
Abstract :
An SOI-based liquid-crystal (LC)-infiltrated photonic-crystal channel waveguide having rectangular air holes in a Silicon core is proposed-and has an average group index of 43 over a bandwidth of 1.02 THz, with vanishing group velocity dispersion, as well as reduced higher-order dispersion. The possible propagation losses due to coupling inefficiency are also investigated for the proposed structure. It is found that high transmission is obtained for a broad bandwidth from the output of the heterogeneous waveguide finally designed, which consists of an LC-infiltrated PhC slow waveguide surrounded by fast PhC regions on either side. The LC-infiltrated W0.7 PhC waveguide that has been designed for slow light propagation should be highly tolerant to fabrication errors-and has enhanced sensitivity in comparison with conventional PhC waveguides.
Keywords :
elemental semiconductors; light propagation; optical design techniques; optical dispersion; optical fabrication; optical waveguides; photonic crystals; silicon; slow light; LC-infiltrated PhC slow waveguide; SOI-based liquid-crystal-infiltrated photonic-crystal channel waveguide; Si; frequency 1.02 THz; group velocity dispersion; higher-order dispersion; liquid-crystal infiltrated silicon-on-insulator photonic crystal channel waveguides; rectangular air holes; slow light propagation; Bandwidth; Couplings; Liquid waveguides; Optical device fabrication; Optical propagation; Photonic crystals; Propagation losses; Rectangular waveguides; Silicon on insulator technology; Slow light; Group velocity dispersion; liquid crystal infiltration; photonic crystal; slow wave structures;
fLanguage :
English
Journal_Title :
Lightwave Technology, Journal of
Publisher :
ieee
ISSN :
0733-8724
Type :
jour
DOI :
10.1109/JLT.2010.2053915
Filename :
5492149
Link To Document :
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