Title :
High Linearity InP-Based Phase Modulators Using a Shallow Quantum-Well Design
Author :
Li, Yifei ; Wang, Renyuan ; Bhardwaj, Ashish ; Ristic, Sasa ; Bowers, John
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Massachusetts at Dartmouth, Dartmouth, MA, USA
Abstract :
Phase modulator nonlinearity is a major problem for implementing an optical phase-locked loop (OPLL) phase demodulator. In this letter, we report an improved InP phase modulator design that uses a detuned shallow multiquantum-well structure. The phase modulator shows high linearity and low optical loss. Its phase IP3 and optical loss per unit length are ~ 4 π/mm and ~ 0.9 dB/mm, respectively. This phase modulator design is thus suitable for implementing the OPLL linear phase demodulator.
Keywords :
III-V semiconductors; indium compounds; optical modulation; phase locked loops; phase modulation; quantum well devices; InP; high linearity based phase modulator; linear phase demodulator; multiquantum well structure; optical phase locked loop phase demodulator; phase modulator nonlinearity; shallow quantum well design; Demodulation; Fiber nonlinear optics; Indium phosphide; Linearity; Nonlinear optics; Optical attenuators; Optical feedback; Optical modulation; Phase modulation; Quantum wells; Linear phase modulator; optical phase-locked loop (OPLL); phase IP3; spurious-free dynamic range (SFDR);
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2010.2054076
