• DocumentCode
    1522246
  • Title

    Ultra-thin porous silicon membranes fabricated using dry etching

  • Author

    Hajj-Hassan, Mohamad ; Cheung, M.C. ; Chodavarapu, Vamsy P.

  • Author_Institution
    Dept. of Electr. & Comput. Eng., McGill Univ., Montreal, QC, Canada
  • Volume
    6
  • Issue
    4
  • fYear
    2011
  • fDate
    4/1/2011 12:00:00 AM
  • Firstpage
    226
  • Lastpage
    228
  • Abstract
    The fabrication of free-standing ultra-thin porous silicon membrane structures using xenon difluoride (XeF2)-based isotropic dry etching of thin silicon wafers is reported. Using this technique, the authors demonstrate 1, 5 and 10 m-thick porous silicon membranes that are stable and self-supporting and of relatively large surface area. By strategically choosing the etching parameters and conditions, membrane thickness and pore size can be tuned to produce porous silicon membranes with attractive features that could allow structural optimisation for different applications including biological sample filtering, sensing and drug delivery. The pore size, porosity and thickness of the various developed ultra-thin free-standing porous silicon membranes were characterised with scanning electron microscopy and optical transmittance measurements.
  • Keywords
    elemental semiconductors; etching; membranes; porosity; porous semiconductors; scanning electron microscopy; silicon; visible spectra; Si; dry etching; optical transmittance; pore size; porosity; scanning electron microscopy; size 1 mum; size 10 mum; size 5 mum; structural optimisation; ultrathin porous silicon membranes; xenon difluoride;
  • fLanguage
    English
  • Journal_Title
    Micro & Nano Letters, IET
  • Publisher
    iet
  • ISSN
    1750-0443
  • Type

    jour

  • DOI
    10.1049/mnl.2010.0233
  • Filename
    5771629