Title :
VLSI performance metric based on minimum TCAD simulations
Author :
Schrom, Gerhard ; De, Vivek ; Selberherr, Siegfried
Author_Institution :
Institute for Microelectronics, TU Vienna, Gusshausstrasse 27-29, A-1040 Vienna, Austria
Abstract :
A new approach to performance metrology and qualification of digital VLSI processes with TCAD simulations is proposed. The method yields performance data on the system level directly from raw electrical device data obtained with a minimum set of device simulations. The key performance and qualification parameters are identified, pointing out the differences between these and traditional device performance metrics, and the methods to determine these parameters from the device data are described.
Keywords :
Computational modeling; Data models; Performance evaluation; Qualifications; Semiconductor process modeling; Very large scale integration;
Journal_Title :
Technology Computer Aided Design TCAD, Journal of
DOI :
10.1109/TCAD.1996.6449169