A computationally efficient ion implantation damage model and its application to multiple implant simulations

Author

Wang, Guibin ; Tian, Shiwei ; Morris, Milton ; Obradovic, Borna ; Balamurugan, Ganesh ; Tasch, A. ; Morris, S. ; Kennel, H. ; Packan, P. ; Magee, Ceridwen ; Sheng, J. ; Lowther, R. ; Linn, J. ; Snell, C.

Author_Institution

Microelectronic Research Center, The University of Texas at Austin, Austin, TX 78712

fYear

1996

Firstpage

1

Lastpage

40

Abstract

A computationally efficient ion implantation cumulative damage model has recently been developed and implemented in UT-MARLOWE Versions 4.0 and 4.1. Based on the modified Kinchin-Pease formula, this model accounts for damage generation and accumulation, defect encounters and amorphization in a simplified way. Good agreement with experimental impurity profiles has been obtained for As, B, BF2 and P implants in single-crystal silicon. In addition, the amorphous layer thicknesses obtained in this model are also in reasonable agreement with experimental measurements. Based on this damage model, a simple but extremely powerful and general method for performing multiple implant simulations has been developed, and very good agreement with experimental data has been obtained.

Keywords

Computational modeling; Crystals; Implants; Impurities; Ion implantation; Lattices; Silicon;

fLanguage

English

Journal_Title

Technology Computer Aided Design TCAD, Journal of

Publisher

ieee

ISSN

1097-2102

Type

jour

DOI

10.1109/TCAD.1996.6449170

Filename

6449170