Calculation of the current response of the spatially modulated light CMOS detector

Author

Genoe, Jan ; Coppée, Danniël ; Stiens, Johan H. ; Vonekx, R.A. ; Kuijk, M.

Author_Institution

ETRO-IMEC Dept., Vrije Univ., Brussels, Belgium

Volume

48

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1892

Lastpage

1902

Abstract

We present an analytical model that allows to calculate the current response of a spatially modulated light CMOS detector (SML-detector) and compare this response with the response of a traditional CMOS photodetector. It is shown that the SML detector already yields a three orders of magnitude faster response time than a traditional CMOS detector in a 0.25 μm CMOS technology. This response time will further decrease as CMOS technology evolves. This analytical expression is compared with a numerical solution of the diffusion equation and with experimental results. Both show an excellent correspondence. Therefore we can conclude that the SML-detector is the solution of choice for cheap, CMOS-compatible receivers in integrated opto-electronic systems

Keywords

CMOS integrated circuits; photodetectors; 0.25 micron; analytical model; current response; diffusion equation; integrated optoelectronic system; optical receiver; photodetector; spatially modulated light CMOS detector; Analytical models; CMOS technology; Delay; Detectors; High speed optical techniques; Integrated circuit technology; Optical interconnections; Optical modulation; Optical receivers; Photodetectors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.944174

Filename

944174