Title :
High rectification in metal-phthalocyanine based single layer devices
Author :
Kumar, Ajit ; Ghosh, Subhasis
Author_Institution :
Sch. of Phys. Sci., Jawaharlal Nehru Univ., New Delhi, India
fDate :
9/1/2001 12:00:00 AM
Abstract :
The current-voltage (JV) characteristics of metal-phthalocyanine (Me-Pc) based single layer hole only indium tin oxide (ITO)/Me-Pc/Metal devices are investigated. It is demonstrated that diode-like asymmetric J-V characteristics with high rectification ratio of about 106 can be achieved if an electrode with low work function is used. But, an electrode with high work function, comparable to the ionization potential of Me-Pc, results in negligible rectification. The J-V characteristics in the forward direction, when ITO is positively biased, can be consistently described as bulk limited space charge current modified with field dependent mobility. The J-V characteristics in the reverse direction, when ITO is negatively biased, are described as tunneling due to hole blocking barrier at Metal/Me-Pc interface
Keywords :
Schottky diodes; carrier mobility; ionisation potential; organic semiconductors; rectification; space-charge-limited conduction; tunnelling; work function; ITO/MePc/metal structure; Schottky barrier diode; current-voltage characteristics; field dependent mobility; hole blocking barrier; ionization potential; metal phthalocyanine single layer device; organic molecular semiconductor; rectification ratio; space charge limited current; tunneling; work function; Electrodes; Electroluminescent devices; FETs; Indium tin oxide; Ionization; Optical materials; Organic materials; Organic semiconductors; Schottky barriers; Semiconductor materials;
Journal_Title :
Electron Devices, IEEE Transactions on
