High rectification in metal-phthalocyanine based single layer devices

Author

Kumar, Ajit ; Ghosh, Subhasis

Author_Institution

Sch. of Phys. Sci., Jawaharlal Nehru Univ., New Delhi, India

Volume

48

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1911

Lastpage

1914

Abstract

The current-voltage (JV) characteristics of metal-phthalocyanine (Me-Pc) based single layer hole only indium tin oxide (ITO)/Me-Pc/Metal devices are investigated. It is demonstrated that diode-like asymmetric J-V characteristics with high rectification ratio of about 10⁶ can be achieved if an electrode with low work function is used. But, an electrode with high work function, comparable to the ionization potential of Me-Pc, results in negligible rectification. The J-V characteristics in the forward direction, when ITO is positively biased, can be consistently described as bulk limited space charge current modified with field dependent mobility. The J-V characteristics in the reverse direction, when ITO is negatively biased, are described as tunneling due to hole blocking barrier at Metal/Me-Pc interface

Keywords

Schottky diodes; carrier mobility; ionisation potential; organic semiconductors; rectification; space-charge-limited conduction; tunnelling; work function; ITO/MePc/metal structure; Schottky barrier diode; current-voltage characteristics; field dependent mobility; hole blocking barrier; ionization potential; metal phthalocyanine single layer device; organic molecular semiconductor; rectification ratio; space charge limited current; tunneling; work function; Electrodes; Electroluminescent devices; FETs; Indium tin oxide; Ionization; Optical materials; Organic materials; Organic semiconductors; Schottky barriers; Semiconductor materials;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.944176

Filename

944176