Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown

Author

Dieci, Domenico ; Sozzi, Giovanna ; Menozzi, Roberto ; Tediosi, Erika ; Lanzieri, Claudio ; Canali, Claudio

Author_Institution

Dipt. di Sci. dell´´Ingegnena, Modena Univ., Italy

Volume

48

Issue

9

fYear

2001

fDate

9/1/2001 12:00:00 AM

Firstpage

1929

Lastpage

1937

Abstract

This work shows experimental and simulated data of hot electron degradation of power AlGaAs/GaAs HFETs with different gate lengths and recess widths, and uses them to infer general indications on the bias and geometry dependence of the device high-field degradation, the meaningfulness of the breakdown voltage figure of merit from a reliability standpoint, and the physical phenomena taking place in the devices during the stress and leading to performance degradation. Possible formulations of a voltage-acceleration law for lifetime extrapolation are also tested

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; junction gate field effect transistors; power field effect transistors; semiconductor device breakdown; semiconductor device reliability; AlGaAs-GaAs; AlGaAs/GaAs power HFET; bias dependence; breakdown voltage; electric field; figure of merit; geometry dependence; high field stress; hot electron degradation; lifetime extrapolation; reliability; voltage acceleration law; Degradation; Electrons; Extrapolation; Gallium arsenide; Geometry; HEMTs; MODFETs; Solid modeling; Stress; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.944179

Filename

944179