Title :
Electric-field-related reliability of AlGaAs/GaAs power HFETs: bias dependence and correlation with breakdown
Author :
Dieci, Domenico ; Sozzi, Giovanna ; Menozzi, Roberto ; Tediosi, Erika ; Lanzieri, Claudio ; Canali, Claudio
Author_Institution :
Dipt. di Sci. dell´´Ingegnena, Modena Univ., Italy
fDate :
9/1/2001 12:00:00 AM
Abstract :
This work shows experimental and simulated data of hot electron degradation of power AlGaAs/GaAs HFETs with different gate lengths and recess widths, and uses them to infer general indications on the bias and geometry dependence of the device high-field degradation, the meaningfulness of the breakdown voltage figure of merit from a reliability standpoint, and the physical phenomena taking place in the devices during the stress and leading to performance degradation. Possible formulations of a voltage-acceleration law for lifetime extrapolation are also tested
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hot carriers; junction gate field effect transistors; power field effect transistors; semiconductor device breakdown; semiconductor device reliability; AlGaAs-GaAs; AlGaAs/GaAs power HFET; bias dependence; breakdown voltage; electric field; figure of merit; geometry dependence; high field stress; hot electron degradation; lifetime extrapolation; reliability; voltage acceleration law; Degradation; Electrons; Extrapolation; Gallium arsenide; Geometry; HEMTs; MODFETs; Solid modeling; Stress; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
