Title :
Semiself-Protection Scheme for Gigahertz High-Frequency Output ESD Protection
Author :
Lee, Jian-Hsing ; Huang, Shao-Chang ; Su, Hung-Der ; Chen, Ke-Horng
Author_Institution :
Richtek Technol. Corp., Hsinchu, Taiwan
fDate :
7/1/2011 12:00:00 AM
Abstract :
In this paper, a semiself-protection scheme is proposed and developed for gigahertz output electrostatic-discharge (ESD) protection. The output transistor acts as a trigger device to trigger the ESD protection device, and then, it is turned off when the ESD protection device turns on. Thus, the capacitance of a gigahertz high-frequency output pad can be minimized because this scheme is without any additional trigger device or any passive component.
Keywords :
MOSFET; electrostatic discharge; thyristors; electrostatic-discharge protection; gigahertz high-frequency output ESD protection; semiself-protection scheme; Electrostatic discharge; Layout; MOSFET circuits; Resistors; Stress; Thyristors; Transistors; Electrostatic discharge (ESD); radio frequency; silicon-controlled rectifier (SCR);
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2011.2143717
